? semiconductor components industries, llc, 2008 november, 2008 ? rev. 4 1 publication order number: 2n4123/d 2n4123, 2n4124 general purpose transistors npn silicon features ? pb ? free packages are available* maximum ratings rating symbol value unit collector ? emitter voltage 2n4123 2n4124 v ceo 30 25 vdc collector ? base v oltage 2n4123 2n4124 v cbo 40 30 vdc emitter ? base v oltage v ebo 5.0 vdc collector current ? continuous i c 200 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 w mw/ c operating and storage junction temperature range t j , t stg ? 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? ambient r ja 200 c/w thermal resistance, junction ? to ? case r jc 83.3 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting t echniques reference manual, solderrm/d. http://onsemi.com collector 3 2 base 1 emitter x = 3 or 4 a = assembly location y = year ww = work week = pb ? free package (note: microdot may be in either location) marking diagram 2n 412x ayww 2n4124g to ? 92 (pb ? free) 5000 units / bulk device package shipping ? 2N4123RLRM to ? 92 2000 / tape & ammo ordering information 1 2 3 1 2 bent lead tape & reel ammo pack straight lead bulk pack 3 to ? 92 case 29 style 1 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure , brd8011 / d.
2n4123, 2n4124 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 1) (i c = 1.0 madc, i e = 0) 2n4123 2n4124 v (br)ceo 30 25 ? ? vdc collector ? base breakdown voltage (i c = 10 adc, i e = 0) 2n4123 2n4124 v (br)cbo 40 30 ? ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 5.0 ? vdc collector cutoff current (v cb = 20 vdc, i e = 0) i cbo ? 50 nadc emitter cutoff current (v eb = 3.0 vdc, i c = 0) i ebo ? 50 nadc on characteristics dc current gain (note 1) (i c = 2.0 madc, v ce = 1.0 vdc) 2n4123 2n4124 (i c = 50 madc, v ce = 1.0 vdc) 2n4123 2n4124 h fe 50 120 25 60 150 360 ? ? ? collector ? emitter saturation voltage (note 1) (i c = 50 madc, i b = 5.0 madc) v ce(sat) ? 0.3 vdc base ? emitter saturation voltage (note 1) (i c = 50 madc, i b = 5.0 madc) v be(sat) ? 0.95 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) 2n4123 2n4124 f t 250 300 ? ? mhz input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo ? 8.0 pf collector ? base capacitance (i e = 0, v cb = 5.0 v, f = 1.0 mhz) c cb ? 4.0 pf small ? signal current gain (i c = 2.0 madc, v ce = 10 vdc, r s = 10 k , f = 1.0 khz) 2n4123 2n4124 h fe 50 120 200 480 ? current gain ? high frequency (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) 2n4123 2n4124 (i c = 2.0 madc, v ce = 10 v, f = 1.0 khz) 2n4123 (i c = 2.0 madc, v ce = 10 v, f = 1.0 khz) 2n4124 |h fe | 2.5 3.0 50 120 ? ? 200 480 ? noise figure (i c = 100 adc, v ce = 5.0 vdc, r s = 1.0 k , f = 1.0 khz) 2n4123 2n4124 nf ? ? 6.0 5.0 db 1. pulse test: pulse width = 300 s, duty cycle = 2.0%.
2n4123, 2n4124 http://onsemi.com 3 figure 1. capacitance reverse bias voltage (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 2. switching times i c , collector current (ma) 200 1.0 time (ns) 100 50 30 20 70 10.0 5.0 7.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 c ibo c obo t s t d t r t f v cc = 3 v i c /i b = 10 v eb(off) = 0.5 v figure 3. frequency variations f, frequency (khz) 4 6 8 10 12 2 0.1 figure 4. source resistance r s , source resistance (k ) 0 nf, noise figure (db) 12 4 102040 0.2 0.4 0 100 4 6 8 10 12 2 14 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1 khz i c = 1 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1 ma source resistance = 200 i c = 0.5 ma source resistance = 500 i c = 100 a source resistance = 1 k i c = 50 a audio small ? signal characteristics noise figure (v ce = 5 vdc, t a = 25 c) bandwidth = 1.0 hz
2n4123, 2n4124 http://onsemi.com 4 figure 5. current gain i c , collector current (ma) 70 100 200 300 50 figure 6. output admittance i c , collector current (ma) h , output admittance ( mhos) figure 7. input impedance i c , collector current (ma) figure 8. voltage feedback ratio i c , collector current (ma) 30 100 50 5 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.5 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h ie 0.1 0.2 1.0 2.0 5.0 10 0.5 0.1 0.2 1.0 2.0 5.0 10 0.5 2 1 0.1 0.2 1.0 2.0 5.0 10 0.5 -4 h parameters (v ce = 10 v, f = 1 khz, t a = 25 c) h fe , current gain , input impedance (k ) static characteristics figure 9. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1 v t j = +125 c +25 c -55 c
2n4123, 2n4124 http://onsemi.com 5 figure 10. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma figure 11. ?on? voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 1.2 0.2 figure 12. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 -1.0 -1.5 -2.0 200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1 v +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat) v , temperature coefficients (mv/ c)
2n4123, 2n4124 http://onsemi.com 6 package dimensions to ? 92 (to ? 226) case 29 ? 11 issue am notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x ? x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j b k g section x ? x c v d n xx seating plane dim min max millimeters a 4.45 5.20 b 4.32 5.33 c 3.18 4.19 d 0.40 0.54 g 2.40 2.80 j 0.39 0.50 k 12.70 --- n 2.04 2.66 p 1.50 4.00 r 2.93 --- v 3.43 --- 1 t straight lead bulk pack bent lead tape & reel ammo pack style 1: pin 1. emitter 2. base 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different a pplications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical e xperts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc prod uct could create a s ituation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney f ees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was neglig ent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 2n4123/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc a sales representative
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